Analytical model of spin-polarized semiconductor lasers
نویسندگان
چکیده
منابع مشابه
Spin-polarized surface-emitting lasers
We investigate the growth, fabrication, and characterization of an electrically-injected spin-polarized laser utilizing an Fe/n+-Al0.1Ga0.9As Schottky tunnel barrier for efficient spin injection into an InGaAs quantum well vertical-cavity surface-emitting laser. A threshold current reduction of 11% and maximum degree of circular polarization of 23% are observed for a 15 μm mesa diameter laser a...
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H. Susanto,1,* K. Schires,2 M. J. Adams,3 and I. D. Henning3 1Department of Mathematical Sciences, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, United Kingdom 2Université Paris-Saclay, Télécom ParisTech, CNRS LTCI, 46 rue Barrault, 75013 Paris, France 3School of Computer Engineering and Electronics Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, United Kingdom (R...
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The high electron mobility spin transistor comprises a 1D or 2D electron gas, obtained from III-V semiconductor heterostructure, with ferromagnetic source and drain contacts. The latter act respectively as a polarizer and as an analyzer for the spin of the electrons, and the gate potential is used to control the spin precession in the channel. After reviewing the main spin dephasing effects exi...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2967739